TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
CURRENT SOURCE WITH GATE CONTROL
V+ = +5V
ALD1102,
1/2 ALD1107,
or ALD1117
ALD1102,
1/2 ALD1107,
or ALD1117
V+ = +5V
V+ = +5V
I SET
R SET
Q 3
Q 4
Q 3
Q 4
I SOURCE
I SET
R SET
I SOURCE
Digital Logic Control
of Current Source
= 4
Q 1
ALD1101,
1/2 ALD1106,
Q 2
I SOURCE = I SET
= V+ -Vt
R SET
~
ON
OFF
Q 1
1/2 ALD1101,
1/4 ALD1106,
or 1/2 ALD1116
or ALD1116
Q 1 , Q 2 : N - Channel MOSFET
Q 3 , Q 4 : P - Channel MOSFET
DIFFERENTIAL AMPLIFIER
ALD1102,
V+
1/2 ALD1107,
or ALD1117
R SET
Q 1 : N - Channel MOSFET
Q 3, Q 4 : P - Channel MOSFET
CURRENT SOURCE MULTIPLICATION
V+ = +5V
Q 3
PMOS PAIR
Q 4
I SET
R SET
I SOURCE = I SET x N
V IN +
Q 1
Q 2
NMOS PAIR
V OUT
V IN -
Q SET
Q 1
Q 2
Q 3
Q N
ALD1101,
1/2 ALD1106,
or ALD1116
Current
Source
Q 1 , Q 2 : N - Channel MOSFET
Q 3 , Q 4 : P - Channel MOSFET
Q SET, Q 1 ..Q N : ALD1101, ALD1106, or ALD1116
N - Channel MOSFET
ALD1101A/ALD1101B/ALD1101
Advanced Linear Devices
4 of 8
相关PDF资料
ALD1102BPAL MOSFET 2P-CH 13.2V 16MA 8PDIP
ALD1103PBL MOSFET 2N+2P 13.2V 14PDIP
ALD1105PBL MOSFET 2N+2P 13.2V 14PDIP
ALD1106SBL MOSFET 4N-CH 13.2V QUAD 14SOIC
ALD1107SBL MOSFET 4P-CH 13.2V QUAD 14SOIC
ALD110800ASCL MOSFET N-CH 10.6V QUAD 16SOIC
ALD110802PCL MOSFET N-CH 10.6V QUAD 16PDIP
ALD110804PCL MOSFET N-CH 10.6V QUAD 16PDIP
相关代理商/技术参数
ALD1101BSAL 功能描述:MOSFET Dual N-Ch FET 10.6 500mW 0.7V 10Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1101DA 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL MATCHED MOSFET PAIR
ALD1101MA 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 13.2V V(BR)DSS | TO-99
ALD1101PA 功能描述:MOSFET Dual N-Channel Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1101PAL 功能描述:MOSFET Dual N-Channel Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1101SA 功能描述:MOSFET Dual N-Channel Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1101SAL 功能描述:MOSFET Dual N-Channel Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1101Z 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 13.2V V(BR)DSS | CHIP